欢迎访问ic37.com |
会员登录 免费注册
发布采购

NESG270034-T1 参数 Datasheet PDF下载

NESG270034-T1图片预览
型号: NESG270034-T1
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管中等输出功率放大( 2 W ) 3 - pin电源MINIMOLD ( 34 PKG ) [NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)]
分类和应用: 晶体晶体管输出元件
文件页数/大小: 11 页 / 330 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NESG270034-T1的Datasheet PDF文件第1页浏览型号NESG270034-T1的Datasheet PDF文件第2页浏览型号NESG270034-T1的Datasheet PDF文件第4页浏览型号NESG270034-T1的Datasheet PDF文件第5页浏览型号NESG270034-T1的Datasheet PDF文件第6页浏览型号NESG270034-T1的Datasheet PDF文件第7页浏览型号NESG270034-T1的Datasheet PDF文件第8页浏览型号NESG270034-T1的Datasheet PDF文件第9页  
NESG270034  
ELECTRICAL CHARACTERISTICS (TA = +25°C)  
Parameter  
DC Characteristics  
Symbol  
Test Conditions  
MIN.  
TYP.  
MAX.  
Unit  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
ICBO  
IEBO  
VCB = 9.2 V, IE = 0 mA  
1
1
µA  
µA  
VEB = 1.0 V, IC = 0 mA  
VCE = 3 V, IC = 100 mA  
Note  
hFE  
80  
120  
180  
RF Characteristics  
Linner Gain (1)  
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
GL  
17.5  
19.5  
dB  
f = 460 MHz, Pin = 0 dBm  
Linner Gain (2)  
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
f = 900 MHz, Pin = 0 dBm  
GL  
Pout  
Pout  
ηC  
31.5  
15  
33.5  
31.5  
60  
dB  
dBm  
dBm  
%
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
f = 460 MHz, Pin = 20 dBm  
Output Power (1)  
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
f = 900 MHz, Pin = 20 dBm  
Output Power (2)  
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
f = 460 MHz, Pin = 20 dBm  
Collector Efficiency (1)  
Collector Efficiency (2)  
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
f = 900 MHz, Pin = 25 dBm  
ηC  
50  
%
Note Pulse measurement: PW 350 µs, Duty Cycle 2%  
hFE CLASSIFICATION  
Rank  
FB  
SQ  
Marking  
hFE Value  
80 to 180  
3
Preliminary Data Sheet PU10577EJ01V0DS