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NESG260234 参数 Datasheet PDF下载

NESG260234图片预览
型号: NESG260234
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN SILICON GERMANIUM RF TRANSISTOR]
分类和应用: 晶体晶体管放大器
文件页数/大小: 11 页 / 353 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG260234  
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)  
REVERSE TRANSFER CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
2.0  
1.6  
f = 1 MHz  
Mounted on glass epoxy PWB  
(34.2 cm2 × 0.8 mm (t) )  
1.2  
0.8  
Nature Neglect  
0.4  
0
0
2
4
6
8
10  
1.0  
1.0  
25  
50  
75  
100 125 150 175  
(˚C)  
Ambient Temperature T  
A
Collector to Base Voltage VCB (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
1 000  
100  
1 000  
100  
V
CE = 5 V  
V
CE = 3 V  
10  
10  
1
1
0.1  
0.1  
0.01  
0.001  
0.0001  
0.01  
0.001  
0.0001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
Base to Emitter Voltage VBE (V)  
Base to Emitter Voltage VBE (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
1 000  
100  
1 000  
100  
V
CE = 6 V  
V
CE = 7 V  
10  
10  
1
1
0.1  
0.1  
0.01  
0.001  
0.0001  
0.01  
0.001  
0.0001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
Base to Emitter Voltage VBE (V)  
Base to Emitter Voltage VBE (V)  
Remark The graphs indicate nominal characteristics.  
4
Data Sheet PU10547EJ02V0DS