NESG204619
ELECTRICAL CHARACTERISTICS (TA =+25ºC)
PARAMETER
DC Characteristics
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
−
−
−
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0 mA
100
100
220
nA
nA
−
VEB = 0.5 V, IC = 0 mA
VCE = 1 V, IC = 2 mA
Note 1
hFE
140
180
RF Characteristics
−
−
Gain Bandwidth Product
Insertion Power Gain
fT
VCE = 1 V, IC = 15 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
15
10
−
18
12
GHz
dB
|S21e|2
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
0.8
1.5
dB
Noise Figure
−
Ga
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
9.0
11.0
0.2
dB
pF
Associated Gain
Note 2
−
Reverse Transfer Capacitance
Cre
VCB = 1 V, IE = 0 mA, f = 1 MHz
0.4
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter is grounded.
hFE CLASSIFICATION
RANK
Marking
hFE Value
FB
T7
140 to 220
CEL [ CALIFORNIA EASTERN LABS ]
