NESG2030M04
1
THERMAL RESISTANCE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
8.0
2.3
1.2
35
Rth j-c
Junction to Case Resistance °C/W
150
VCEO
V
VEBO
V
ORDERING INFORMATION (Solder Contains Lead)
IC
mA
mW
PART NUMBER
NESG2030M04
NESG2030M04-T2
QUANTITY
50 pcs(non reel)
3 kpcs/reel
2
PT
Total Power Dissipation
80
TJ
Junction Temperature
Storage Temperature
°C
°C
150
TSTG
-65 to +150
Note:
ORDERING INFORMATION (Pb-Free)
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm2 • 1.0 mm (t) glass epoxy substrate
PART NUMBER
QUANTITY
NESG2030M04-A
50 pcs(non reel)
NESG2030M04-T2-A 3 kpcs/reel
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT vs.
COLLECTOR CURRENT
COLLECTOR TO EMITTER VOLTAGE
1000
40
VCE = 2 V
35
30
25
20
15
10
5
190 μa
160 μa
130 μa
100 μa
100
70 μa
40 μa
IB = 10 μa
10
0
100
1
10
0.1
0
1
2
3
Collector Current, lC (mA)
Collector to Emitter Voltage, VCE (V)
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
INSERTION POWER GAIN
vs. FREQUENCY
40
35
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 2 V
V
CE = 2 V
f = 2 GHz
I
C = 20 mA
0
0
0.1
1
10
0
10
100
Collector Current, IC (mA)
Frequency, f (GHz)
CEL [ CALIFORNIA EASTERN LABS ]
