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NESG2030M04 参数 Datasheet PDF下载

NESG2030M04图片预览
型号: NESG2030M04
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 10 页 / 430 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG2030M04  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
MAXIMUM STABLE GAIN,  
INSERTION POWER GAIN  
vs. COLLECTOR CURRENT  
MAXIMUM STABLE GAIN,  
INSERTION POWER GAIN  
vs. COLLECTOR CURRENT  
30  
25  
20  
15  
10  
5
30  
V
CE = 2 V  
V
CE = 2 V  
f = 2 GHz  
f = 1 GHz  
25  
20  
15  
10  
5
MSG  
MSG  
2
|S21e  
|
2
|S21e  
|
0
0
1
1
10  
100  
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
MAXIMUM AVAILABLE GAIN,  
INSERTION POWER GAIN  
vs. COLLECTOR CURRENT  
OUTPUT POWER, COLLECTOR  
CURRENT vs. INPUT POWER  
80  
25  
20  
15  
10  
5
30  
V
CE = 2 V, f = GHz  
V
CE = 2 V  
Icq = 5 mA(RF OFF)  
f = 5 GHz  
70  
60  
50  
40  
30  
20  
10  
0
25  
20  
15  
10  
5
P
out  
MAG  
0
-5  
2
|S21e  
|
I
C
-10  
0
-15  
-20  
-15  
-10  
-5  
0
5
1
10  
100  
Collector Current, IC (mA)  
Input Power, Pin (V)  
THIRD ORDER INTERMODULATION  
DISTORTION  
NOISE FIGURE AND ASSOCIATED  
GAIN vs. COLLECTOR CURRENT  
vs. OUTPUT POWER  
70  
5
4
3
2
1
0
25  
20  
15  
10  
5
V
CE = 2 V  
VCE = 2 V  
Icq = 5 mA  
f = 2 GHz  
f = 1.5 GHz  
60  
50  
G
a
offset = 1 MHz  
40  
30  
20  
10  
NF  
0
0
-5  
0
5
10  
15  
20  
1
10  
100  
Collector Current, IC (mA)  
Output Power (each tone), Pout (mA)