NE856 SERIES
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
VCBO
VCEO
VEBO
IC
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
UNITS
V
RATINGS
20
V
12
V
3.0
mA
°C
100
TJ
Junction Temperature
Storage Temperature
1502
TSTG
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Maximum TJ for the NE85600 and NE85635 is 200°C.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE85632 AND NE85634
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
NE85633 AND NE85635
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.4
2.0
1.6
400
300
NE85634
Ceramic Substrate
2
2.5 cm X 0.7 mm
Aluminum
Heat Sink
for NE85632
RTH (J-A) = 62.5˚C/W
NE85635
10
1.2
200
7.8
3.8
NE85632
with Heat
Sink
NE85632
Free Air
0.8
0.4
0
NE85633
100
NE85634
Free Air
0
0
50
100
150
0
50
100
150
200
Ambient Temperature, TA (°C)
Ambient Temperature, TA (°C)
COLLECTOR TO BASE
CAPACITANCE vs. COLLECTOR
TO BASE VOLTAGE
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
5.0
500
VCE = 10 V
3.0
2.0
300
200
NE85634
1.0
0.7
0.5
100
70
50
NE85632/
33
NE85635
0.3
0.2
30
20
10
0.1
1
2
3
5
7
10
20 30
50
1
2
3
5
7
10
20 30
50
Collector to Base Voltage, VCB (V)
Collector Current, IC (mA)
CEL [ CALIFORNIA EASTERN LABS ]
