NE856M03
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
ORDERING INFORMATION
SYMBOLS
VCBO
VCEO
VEBO
IC
PARAMETERS
UNITS
RATINGS
PART NUMBER
QUANTITY
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
20
NE856M03-A
V
12
3
NE856M03-T1-A
V
mA
mW
°C
100
PT
Total Power Dissipation
Junction Temperature
Storage Temperature
125
TJ
150
TSTG
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
FORWARD CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
500
VCE = 10 V
300
200
80
60
100
70
50
40
20
30
20
10
2
4
6
8
10
12
0
1
2
3
5
7
10
20 30
50
Collector Current, IC (mA)
Collector to Emitter Voltage, VCE (V)
NE856M03 INTERMODULATION
DISTORTION vs. COLLECTOR CURRENT
-80
-70
IM3
V
CE = 10 V
= 100 dBµV/50 Ω
= R = 50 Ω
VO
R
G
L
-60
-50
IM2
-40
-30
IM
IM
2
3
f = 90 + 100 MHz
f = 2
X
200-190 MHz
20
30
40
50
60
70
Collector Current, IC (mA)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
06/10/2002
DATA SUBJECT TO CHANGE WITHOUT NOTICE