NE85633 / 2SC3356
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 10 V, IE = 0 mA
–
–
–
–
1.0
1.0
250
A
A
–
VEB = 1.0 V, IC = 0 mA
VCE = 10 V, IC = 20 mA
Note 1
hFE
50
120
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
fT
VCE = 10 V, IC = 20 mA
–
–
–
7
–
GHz
dB
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz
11.5
1.1
–
NF
VCE = 10 V, IC = 7 mA, f = 1 GHz
VCB = 10 V, IE = 0 mA, f = 1 MHz
2.0
1.0
dB
Note 2
Reverse Transfer Capacitance
Cre
0.55
pF
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
R23/Q Note
R23
R24/R Note
R24
R25/S Note
R25
Marking
hFE Value
50 to 100
80 to 160
125 to 250
Note Old Specification/New Specification
2
Data Sheet PU10209EJ02V0DS
CEL [ CALIFORNIA EASTERN LABS ]
