NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
•
HIGH f
T
:
14 GHz TYP at 3 V, 10 mA
LOW NOISE FIGURE:
NF = 1.6 dB TYP at 2 GHz
HIGH GAIN:
|S
21E
|
2
= 14 dB TYP at 2 GHz
6 PIN SMALL MINI MOLD PACKAGE
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
2.0
±
0.2
1.3
2
0.65
1
NE696M01
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.1
±
0.1
1.25
±
0.1
6
0.2 (All Leads)
5
T95
SIDE VIEW
3
4
DESCRIPTION
NEC's NE696M01 is an NPN high frequency silicon epitaxial
transistor (NE685) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE696M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
0.9
±
0.1
0.7
0.15
- 0.05
0 ~ 0.1
+0.10
PIN OUT
1. Emitter
2. Emitter
3. Base
4. Emitter
5. Emitter
6. Collector
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE1
f
T
Cre
2
|S
21E
|
2
NF
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 3 V, I
C
= 10 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
GHz
pF
dB
dB
UNITS
µA
µA
80
120
14
0.15
14
1.6
MIN
NE696M01
M01
TYP
MAX
0.1
0.1
160
Notes:
1. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
