欢迎访问ic37.com |
会员登录 免费注册
发布采购

NE68830-T1-A 参数 Datasheet PDF下载

NE68830-T1-A图片预览
型号: NE68830-T1-A
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装NPN硅高频三极管 [SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用:
文件页数/大小: 20 页 / 348 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE68830-T1-A的Datasheet PDF文件第1页浏览型号NE68830-T1-A的Datasheet PDF文件第3页浏览型号NE68830-T1-A的Datasheet PDF文件第4页浏览型号NE68830-T1-A的Datasheet PDF文件第5页浏览型号NE68830-T1-A的Datasheet PDF文件第6页浏览型号NE68830-T1-A的Datasheet PDF文件第7页浏览型号NE68830-T1-A的Datasheet PDF文件第8页浏览型号NE68830-T1-A的Datasheet PDF文件第9页  
NE688 SERIES  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)  
SYMBOLS  
PARAMETERS  
UNITS RATINGS  
VCBO  
Collector to Base Voltage  
V
9
VCEO  
VEBO  
IC  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
V
6
2.0  
100  
mA  
TJ  
Operating Junction  
Temperature  
°C  
°C  
150  
TSTG  
Storage Temperature  
-65 to +150  
Notes:  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
NE68818, NE68830  
NE68819  
D.C. POWER DERATING CURVE  
D.C. POWER DERATING CURVE  
200  
150  
100  
Free Air  
Free Air  
100  
50  
0
0
0
50  
100  
150  
0
100  
50  
150  
Ambient Temperature TA (°C)  
Ambient Temperature TA (°C)  
NE68833, NE68839  
COLLECTOR CURRENT vs.  
D.C. POWER DERATING CURVE  
COLLECTOR TO EMITTER VOLTAGE  
30  
25  
200 µA  
180 µA  
Free Air  
200  
160 µA  
140 µA  
20  
15  
10  
5
120 µA  
100 µA  
100  
80 µA  
60 µA  
40 µA  
IB = 20 µA  
0
0
7
5
0
150  
0
2.5  
50  
100  
Ambient Temperature TA (°C)  
Collector to Emitter Voltage, VCE (V)