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NE688 参数 Datasheet PDF下载

NE688图片预览
型号: NE688
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装NPN硅高频三极管 [SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 20 页 / 348 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE688 SERIES  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
NE68833  
NE68833  
INSERTION GAIN vs. COLLECTOR CURRENT  
NOISE FIGURE vs. COLLECTOR CURRENT  
8
5
f = 2 GHz  
f = 2 GHz  
V
CE = 3 V  
4
3
6
4
V
CE = 1 V  
VCE = 3 V  
2
2
0
V
CE = 1 V  
1
0
1
2
5
100  
20  
50  
2
5
10  
50  
20  
10  
1
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
NE68839  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
D.C. CURRENT GAIN vs.  
COLLECTOR CURRENT  
200  
10  
f = 2 GHz  
V
CE = 1 V  
V
CE = 3 V  
8
6
4
V
CE = 1 V  
100  
2
0
0
0.2  
20  
100  
0.1  
0.5  
2
5
10  
1
50  
1
2
10  
20  
50  
5
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
NE68830  
FEED-BACK CAPACITANCE vs.  
COLLECTOR TO BASE VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
100  
50  
VCE = 1 V  
f = 1 MHz  
20  
10  
5
1.0  
2
1
0.5  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.1  
1
0
0.5  
20  
1
10  
5
Base to Emitter Voltage, VBE (V)  
Collector to Base Voltage, VCB (V)