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NE687M33-T3-A 参数 Datasheet PDF下载

NE687M33-T3-A图片预览
型号: NE687M33-T3-A
PDF下载: 下载PDF文件 查看货源
内容描述: NEC的NPN硅晶体管 [NECs NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 346 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE687M33-T3-A的Datasheet PDF文件第1页浏览型号NE687M33-T3-A的Datasheet PDF文件第2页浏览型号NE687M33-T3-A的Datasheet PDF文件第4页浏览型号NE687M33-T3-A的Datasheet PDF文件第5页浏览型号NE687M33-T3-A的Datasheet PDF文件第6页  
NE687M33  
TYPICAL CHARACTERISTICS (TA =+25ºC, unless otherwise specified)  
REVERSE TRANSFER CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
250  
200  
150  
0.6  
Mounted on Glass Epoxy PCB  
f = 1 MHz  
(1.08 cm2 × 1.0 mm (t) )  
0.5  
0.4  
0.3  
0.2  
0.1  
100  
90  
50  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
Ambient Temperature TA (ºC)  
Collector to Base Voltage VCB (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
100  
10  
1
100  
10  
1
VCE = 1 V  
VCE = 2 V  
0.1  
0.1  
0.01  
0.001  
0.01  
0.001  
0.0001  
0.0001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Base to Emitter Voltage VBE (V)  
Base to Emitter Voltage VBE (V)  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
35  
500 A  
µ
400  
450 A  
µ
µ
A
350 A  
µ
30  
300  
250  
µ
A
A
25  
20  
µ
µ
µ
200  
150  
A
A
15  
10  
5
µ
µ
100  
A
A
IB = 50  
0
1
2
3
4
Collector to Emitter Voltage VCE (V)  
Remark The graphs indicate nominal characteristics.