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NE68730-T1 参数 Datasheet PDF下载

NE68730-T1图片预览
型号: NE68730-T1
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装NPN硅高频三极管 [SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 22 页 / 315 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE687 SERIES  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
NE68718  
NE68733  
INSERTION GAIN vs.  
COLLECTOR CURRENT  
NOISE FIGURE vs.  
COLLECTOR CURRENT  
14  
4
f = 2 GHz  
f = 2 GHz  
12  
3
2 V  
CE = 1 V  
10  
V
CE = 1 V  
CE = 2 V  
V
2
V
8
6
4
1
0
1
5
2
10  
20 30  
100  
1
2
5
20  
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
NE68718  
D.C. CURRENT GAIN vs.  
COLLECTOR CURRENT  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
500  
16  
14  
f = 2 GHz  
200  
100  
12  
10  
8
2 V  
CE = 1 V  
V
VCE = 2 V  
VCE = 1 V  
50  
6
20  
10  
4
2
1
5
100  
10  
20 30 50  
2
1
5
100  
2
20  
10  
50  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
NE68730  
FEED-BACK CAPACITANCE vs.  
COLLECTOR TO BASE VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
50  
40  
30  
20  
0.6  
VCE = 2V  
f = 1 MHz  
0.5  
0.4  
0.3  
0.2  
10  
0
0.5  
1.0  
1.0  
2.0  
3.0  
4.0  
5.0  
Base to Emitter Voltage, VBE (V)  
Collector to Base Voltage, VCB (V)