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NE68533-T1-A 参数 Datasheet PDF下载

NE68533-T1-A图片预览
型号: NE68533-T1-A
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装NPN硅高频三极管 [SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 18 页 / 355 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE68533-T1-A的Datasheet PDF文件第1页浏览型号NE68533-T1-A的Datasheet PDF文件第2页浏览型号NE68533-T1-A的Datasheet PDF文件第3页浏览型号NE68533-T1-A的Datasheet PDF文件第5页浏览型号NE68533-T1-A的Datasheet PDF文件第6页浏览型号NE68533-T1-A的Datasheet PDF文件第7页浏览型号NE68533-T1-A的Datasheet PDF文件第8页浏览型号NE68533-T1-A的Datasheet PDF文件第9页  
NE685 SERIES  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
NE68518, NE68530  
NE68519  
D.C. POWER DERATING CURVE  
D.C. POWER DERATING CURVE  
200  
200  
180  
180  
INFINITE  
HEAT SINK  
INFINITE  
HEAT SINK  
150  
125  
100  
FREE AIR  
100  
FREE AIR  
50  
0
0
0
114  
50  
100  
150  
150  
50  
50  
114  
0
100  
150  
Ambient Temperature, TA (C°)  
Ambient Temperature, TA (C°)  
INSERTION GAIN vs.  
COLLECTOR CURRENT  
NE68533,NE68539  
D.C. POWER DERATING CURVE  
12  
VCE = 3 V  
f = 2 GHz  
10  
8
200  
180  
INFINITE  
HEAT SINK  
6
FREE AIR  
100  
4
2
0
0
38.4  
114  
1
2
5
10  
20  
50  
0
50  
100  
Ambient Temperature, TA (°C)  
Collector Current, IC (mA)  
FORWARD INSERTION GAIN  
AND MAXIMUM AVAILABLE GAIN  
vs. FREQUENCY  
NOISE FIGURE  
vs. COLLECTOR CURRENT  
50  
40  
30  
20  
5
4
V
CE = 3 V  
f = 2 GHz  
V
CE = 3 V  
I
C = 10 mA  
3
2
MAG  
2
|S21E  
|
10  
0
1
0
1
2
5
10  
20  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
Collector Current, IC (mA)  
Frequency, f (GHz)