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NE685M13 参数 Datasheet PDF下载

NE685M13图片预览
型号: NE685M13
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管光电二极管
文件页数/大小: 9 页 / 158 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE685M13  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
GAIN BANDWIDTH PRODUCT vs.  
COLLECTOR CURRENT  
DC CURRENT GAIN vs.  
COLLECTOR CURRENT  
1 000  
16  
14  
12  
10  
8
V
CE = 3 V  
VCE = 3 V  
f = 2 GHz  
100  
6
4
2
10  
0.1  
0
1
1
10  
100  
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
INSERTION POWER GAIN VS.  
FREQUENCY  
INSERTION POWER GAIN VS.  
FREQUENCY  
35  
35  
30  
25  
20  
15  
V
CE = 1 V  
= 10 mA  
V
CE = 3 V  
IC  
IC = 10 mA  
30  
25  
20  
15  
10  
5
10  
5
0
0.1  
0
0.1  
1
10  
1
10  
Frequency, f (GHz)  
Frequency, f (GHz)  
INSERTION POWER GAIN, MAG, MSG VS.  
COLLECTOR CURRENT  
INSERTION POWER GAIN, MAG, MSG VS.  
COLLECTOR CURRENT  
20  
20  
VCE = 3 V  
f = 1 GHz  
MSG  
MAG  
V
CE = 1 V  
MSG  
MAG  
f = 1 GHz  
2
15  
10  
15  
10  
|S21e|  
2
|S21e  
|
5
0
5
0
1
10  
Collector Current, IC (mA)  
100  
1
10  
Collector Current, IC (mA)  
100  
3-157