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NE681M03-T1-A 参数 Datasheet PDF下载

NE681M03-T1-A图片预览
型号: NE681M03-T1-A
PDF下载: 下载PDF文件 查看货源
内容描述: NEC的NPN硅晶体管 [NECs NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 142 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE681M03-T1-A的Datasheet PDF文件第1页浏览型号NE681M03-T1-A的Datasheet PDF文件第3页浏览型号NE681M03-T1-A的Datasheet PDF文件第4页  
NE681M03  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)  
ORDERING INFORMATION  
SYMBOLS  
VCBO  
VCEO  
VEBO  
IC  
PARAMETERS  
UNITS  
RATINGS  
PART NUMBER QUANTITY  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
20  
10  
NE681M03-A  
V
NE681M03-T1-A  
V
1.5  
mA  
mW  
°C  
65  
PT  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
125  
TJ  
150  
TSTG  
°C  
-65 to +150  
Note:  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
FORWARD CURRENT GAIN  
COLLECTOR CURRENT vs.  
vs. COLECTOR CURRENT  
COLLECTOR TO EMITTER VOLTAGE  
65  
500  
VCE = 8 V  
300  
200  
55  
45  
100  
35  
25  
70  
50  
30  
20  
15  
5
10  
2
4
6
8
10  
0
1
2
3
5
7
10  
20 30  
50  
Collector to Emitter Voltage, VCE (V)  
Collector Current, IC (mA)