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NE677M04-T2-A 参数 Datasheet PDF下载

NE677M04-T2-A图片预览
型号: NE677M04-T2-A
PDF下载: 下载PDF文件 查看货源
内容描述: 中功率NPN硅高频三极管 [MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用:
文件页数/大小: 8 页 / 171 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE677M04  
TYPICAL PERFORMANCE CURVES (TA = 25 °C)  
OUTPUT POWER, POWER GAIN,  
COLLECTOR CURRENT, COLLECTOR  
EFFICIENCY vs. INPUT POWER  
OUTPUT POWER, POWER GAIN,  
COLLECTOR CURRENT, COLLECTOR  
EFFICIENCY vs. INPUT POWER  
25  
20  
15  
10  
25  
20  
15  
10  
250  
200  
150  
100  
250  
200  
150  
100  
V
CE = 3.2 V  
V
CE = 2.8 V  
f = 1.8 GHz  
Icq = 8 mA (RF OFF)  
f = 0.9 GHz  
G
P
Icq = 8 mA (RF OFF)  
G
P
P
out  
P
out  
ηc  
ηc  
5
0
5
0
50  
0
50  
0
I
c
Ic  
-15  
-10  
-5  
0
5
10  
-20  
-15  
-10  
-5  
0
5
Input Power Pin (dBm)  
Input Power Pin (dBm)  
OUTPUT POWER, POWER GAIN,  
OUTPUT POWER, POWER GAIN,  
COLLECTOR CURRENT, COLLECTOR  
EFFICIENCY vs. INPUT POWER  
COLLECTOR CURRENT, COLLECTOR  
EFFICIENCY vs. INPUT POWER  
25  
20  
15  
10  
25  
20  
15  
10  
250  
200  
150  
100  
250  
200  
150  
100  
V
CE = 3.2 V  
f = 2.4 GHz  
cq = 8 mA (RF OFF)  
V
CE = 3.2 V  
f = 1.8 GHz  
cq = 8 mA (RF OFF)  
I
I
G
P
G
P
P
out  
P
out  
ηc  
ηc  
5
0
50  
0
5
0
50  
0
Ic  
Ic  
-15  
-10  
-5  
0
5
10  
-15  
-10  
-5  
0
5
10  
Input Power Pin (dBm)  
Input Power Pin (dBm)