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NE664M04 参数 Datasheet PDF下载

NE664M04图片预览
型号: NE664M04
PDF下载: 下载PDF文件 查看货源
内容描述: 中功率NPN硅高FRQUENCY晶体管 [MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 10 页 / 239 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE664M04  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,  
& COLLECTOR EFFICIENCY  
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,  
& COLLECTOR EFFICIENCY  
vs. INPUT POWER  
vs. INPUT POWER  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
V
CE = 3.2 V, f = 0.9 GHz  
V
CE = 3.2 V, f = 2.4 GHz  
ICq = 20 mA, 1/2 Duty  
ICq = 20 mA, 1/2 Duty  
Pout  
Pout  
IC  
GP  
IC  
GP  
ηc  
ηc  
0
-15  
0
15  
0
-5  
0
25  
-5  
Input Power, Pin (dBm)  
5
-10  
10  
0
20  
0
5
10  
15  
Input Power, Pin (dBm)  
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,  
& COLLECTOR EFFICIENCY  
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,  
& COLLECTOR EFFICIENCY  
vs. INPUT POWER  
vs. INPUT POWER  
30  
25  
20  
15  
10  
5
300  
250  
200  
150  
100  
50  
30  
25  
20  
15  
10  
5
300  
250  
200  
150  
100  
50  
V
CE = 3.2 V, f = 1.8 GHz  
V
CE = 3.2 V, f = 1.8 GHz  
ICq = 4 mA, 1/2 Duty  
ICq = 20 mA, 1/2 Duty  
Pout  
Pout  
IC  
I
C
GP  
GP  
ηc  
ηc  
0
-10  
0
20  
0
-10  
0
20  
0
-5  
5
10  
15  
0
-5  
5
10  
15  
Input Power, Pin (dBm)  
Input Power, Pin (dBm)  
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,  
& COLLECTOR EFFICIENCY  
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,  
& COLLECTOR EFFICIENCY  
vs. INPUT POWER  
vs. INPUT POWER  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
V
CE = 3.6 V, f = 1.8 GHz  
V
CE = 3.6 V, f = 1.8 GHz  
ICq = 20 mA, 1/2 Duty  
ICq = 4 mA, 1/2 Duty  
Pout  
P
out  
IC  
I
C
GP  
GP  
ηc  
ηc  
0
-10  
0
20  
0
-10  
0
20  
0
0
-5  
5
10  
15  
-5  
5
10  
15  
Input Power, Pin (dBm)  
Input Power, Pin (dBm)