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NE66219-T1-A 参数 Datasheet PDF下载

NE66219-T1-A图片预览
型号: NE66219-T1-A
PDF下载: 下载PDF文件 查看货源
内容描述: [NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)]
分类和应用:
文件页数/大小: 6 页 / 329 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE66219-T1-A的Datasheet PDF文件第1页浏览型号NE66219-T1-A的Datasheet PDF文件第3页浏览型号NE66219-T1-A的Datasheet PDF文件第4页浏览型号NE66219-T1-A的Datasheet PDF文件第5页浏览型号NE66219-T1-A的Datasheet PDF文件第6页  
NE66219 / 2SC5606  
ELECTRICAL CHARACTERISTICS (TA = +25C)  
Parameter  
DC Characteristics  
Symbol  
Test Conditions  
MIN.  
TYP.  
MAX.  
Unit  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
ICBO  
IEBO  
VCB = 5 V, IE = 0 mA  
200  
200  
100  
nA  
nA  
VEB = 1 V, IC = 0 mA  
VCE = 2 V, IC = 5 mA  
Note 1  
hFE  
60  
80  
RF Characteristics  
Gain Bandwidth Product  
Insertion Power Gain  
Noise Figure  
fT  
VCE = 2 V, IC = 20 mA, f = 2 GHz  
10  
21  
12.5  
1.2  
GHz  
dB  
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz  
VCE = 2 V, IC = 5 mA, f = 2 GHz,  
NF  
1.5  
dB  
ZS = Zopt  
Note 2  
Reverse Transfer Capacitance  
Maximum Available Power Gain  
Maximum Stable Power Gain  
Cre  
VCB = 2 V, IE = 0 mA, f = 1 MHz  
0.21  
14  
0.3  
pF  
dB  
dB  
MAGNote 3 VCE = 2 V, IC = 20 mA, f = 2 GHz  
MSGNote 4 VCE = 2 V, IC = 20 mA, f = 2 GHz  
15  
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2%  
2. Collector to base capacitance when the emitter grounded  
S21  
(K (K2 1) )  
3. MAG =  
S12  
S21  
4. MSG =  
S12  
hFE CLASSIFICATION  
Rank  
Marking  
hFE  
FB/YFB  
UA  
<R>  
60 to 100  
2
Data Sheet PU10781EJ01V0DS