NE5531079A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
Ratings
Unit
V
Note 1
VDS
30
6.0
VGS
IDS
V
3.0
A
Note 2
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
IDS
6.0
A
Ptot
Tch
Tstg
35
W
C
C
125
55 to +125
Note 1. VDS will be used under 12 V on RF operation.
2. Duty Cycle 50%, Ton 1 s
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
Test Conditions
MIN.
TYP.
6.0
MAX.
7.5
2.05
Unit
V
VGS
IDS
1.15
1.55
2.0
V
A
Input Power
Pin
f = 460 MHz, VDS = 6.0 V
25
30
dBm
ELECTRICAL CHARACTERISTICS
(TA = +25C, unless otherwise specified, using our standard test fixture)
Parameter
Symbol
IGSS
Test Conditions
MIN.
TYP.
MAX.
100
10
Unit
nA
Gate to Source Leakage Current
VGS = 6.0 V
VDS = 25 V
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
nA
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
Output Power
Vth
Rth
VDS = 7.5 V, IDS = 1.0 mA
Channel to Case
0.8
1.15
2.9
3.2
35
1.55
V
C/W
S
gm
VDS = 7.5 V, IDS = 700100 mA
IDSS = 10 A
2.5
25
39.0
4.0
BVDSS
Pout
IDS
V
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
40.0
2.0
68
dBm
A
Drain Current
Power Added Efficiency
Linear Gain
add
IDset = 200 mA (RF OFF)
%
Note
GL
20.5
dB
Note Pin = 10 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Data Sheet PU10752EJ01V0DS
CEL [ CALIFORNIA EASTERN LABS ]
