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NE3515S02-T1D 参数 Datasheet PDF下载

NE3515S02-T1D图片预览
型号: NE3515S02-T1D
PDF下载: 下载PDF文件 查看货源
内容描述: [HETERO JUNCTION FIELD EFFECT TRANSISTOR]
分类和应用:
文件页数/大小: 9 页 / 415 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE3515S02  
This product uses gallium arsenide (GaAs).  
Caution GaAs Products  
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the  
following points.  
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws  
and/or ordinances, dispose of the product as recommended below.  
1. Commission a disposal company able to (with a license to) collect, transport and dispose of  
materials that contain arsenic and other such industrial waste materials.  
2. Exclude the product from general industrial waste and household garbage, and ensure that the  
product is controlled (as industrial waste subject to special control) up until final disposal.  
• Do not burn, destroy, cut, crush, or chemically dissolve the product.  
• Do not lick the product or in any way allow it to enter the mouth.  
Data Sheet PG10708EJ01V0DS  
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