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NE3508M04-A 参数 Datasheet PDF下载

NE3508M04-A图片预览
型号: NE3508M04-A
PDF下载: 下载PDF文件 查看货源
内容描述: 异质结场效应TRANSISITOR [HETERO JUNCTION FIELD EFFECT TRANSISITOR]
分类和应用: 晶体晶体管光电二极管ISM频段放大器
文件页数/大小: 11 页 / 1291 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE3508M04-A的Datasheet PDF文件第1页浏览型号NE3508M04-A的Datasheet PDF文件第3页浏览型号NE3508M04-A的Datasheet PDF文件第4页浏览型号NE3508M04-A的Datasheet PDF文件第5页浏览型号NE3508M04-A的Datasheet PDF文件第6页浏览型号NE3508M04-A的Datasheet PDF文件第7页浏览型号NE3508M04-A的Datasheet PDF文件第8页浏览型号NE3508M04-A的Datasheet PDF文件第9页  
NE3508M04  
RECOMMENDED OPERATING CONDITIONS(TA = +25 °C)  
PARAMETER  
Drain to Source Voltage  
Drain Current  
SYMBOL  
MIN.  
TYP.  
MAX.  
3
UNIT  
VDS  
---  
2
V
ID  
---  
10  
30  
mA  
dBm  
Input Power  
Pin  
---  
---  
0
ELECTRICAL CHARACTERISTICS TA = +25 °C)  
PARAMETER  
Gate to Source Leak Current  
Saturated Drain Current  
Gate to Source Cutoff Voltage  
Trans conductance  
SYMBOL TEST CONDITIONS  
MIN.  
---  
TYP.  
MAX.  
20  
UNIT  
IGSO  
IDSS  
VGS(off)  
gm  
VGS=-3V  
1
µA  
mA  
V
VDS=2V, VGS=0V  
VDS=2V, ID=100µA  
VDS=2V, ID=10mA  
60  
90  
120  
-0.65  
---  
-0.35  
100  
---  
-0.5  
---  
mS  
dB  
dB  
Noise Figure  
NF  
0.45  
14  
0.9  
VDS=2V, ID=10mA  
f
2GHz  
Associated Gain  
Ga  
12  
---  
VDS=3V,  
ID=30mA(Non-RF)  
Output Power at 1dB Gain  
Compression Point  
Po(1dB)  
---  
18  
---  
dBm  
f
2GHz  
The information in this document is subject to change without notice.  
PRELIMINARY PRODUCT INFORMATION