NE32500
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
SYMBOLS
VDS
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
UNITS RATINGS
V
V
4.0
-3.0
V
DS = 2 V
VGS
60
40
IDS
mA
IDSS
PT
Total Power Dissipation2 mW
200
TCH
Channel Temperature
Storage Temperature
°C
°C
175
TSTG
-65 to +175
Note:
20
0
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Chip mounted on Alumina heatsink (size: 3 x 3 x 0.6t)
-2.0
-1.0
0
Gate to Source Voltage, VGS (V)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENTTEMPERATURE
100
250
80
60
40
20
200
150
V
GS = 0 V
-0.2 V
-0.4 V
100
50
-0.6 V
-0.8 V
0
0
50
100
150
200
250
3.0
0
1.5
Drain to Source Voltage, VDS (V)
Ambient Temperature, TA (°C)
NOISE FIGURE AND ASSOCIATED GAIN
vs. DRAIN CURRENT
NOISE FIGURE AND ASSOCIATED GAIN
vs. FREQUENCY
24
VDS = 2 V
V
DS = 2 V
14
13
f = 12 GHz
I
D = 10 mA
GA
20
16
G
A
12
11
10
2.0
1.5
12
1.0
0.5
0
1.0
0.5
8
4
NF
NF
14
20
1
2
10
8
30
4
6
10
20
30
0
Drain Current, ID (mA)
Frequency, f (GHz)
CEL [ CALIFORNIA EASTERN LABS ]
