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NDL5551P2D 参数 Datasheet PDF下载

NDL5551P2D图片预览
型号: NDL5551P2D
PDF下载: 下载PDF文件 查看货源
内容描述: 1000至1600年纳米光纤通信50微米的InGaAs雪崩光电二极管模块 [1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 50 um InGaAs AVALANCHE PHOTO DIODE MODULE]
分类和应用: 光纤光电二极管光电二极管PC局域网通信
文件页数/大小: 5 页 / 48 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NDL5551P SERIES  
ABSOLUTE MAXIMUM RATINGS1  
(TC = 25°C, unless otherwise specified)  
SYMBOLS  
PARAMETERS  
Forward Current  
UNITS  
mA  
mA  
°C  
RATINGS  
10  
IF  
IR  
Reverse Current  
0.5  
TC  
Operating Case Temp.  
Storage Temperature  
-40 to +85  
-40 to +85  
TSTG  
°C  
Note:  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
TYPICAL PERFORMANCE CURVES (TC = 25°C, unless otherwise specified)  
TEMPERATURE DEPENDENCE OF  
RESPONSIVITY  
WAVELENGTH DEPENDENCE OF  
QUANTUM EFFICIENCY  
100  
10  
λ = 1300 nm  
80  
60  
40  
20  
0
0
-10  
0.9 1.0  
1.1  
1.2  
1.3 1.4  
1.5  
1.6 1.7  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
Wavelength, λ (µm)  
Operating Case Temperature, TC (°C)  
DARK CURRENT AND PHOTO  
CURRENT VS. REVERSE VOLTAGE  
DARK CURRENT vs.  
REVERSE VOLTAGE  
10-6  
10-7  
10-8  
10-9  
10-10  
10-3  
λ = 1300 nm  
I
T
PO = 1.0 µA  
C
= 25°C  
10-4  
10-5  
10-6  
10-7  
10-8  
10-9  
10-10  
lph  
TC = 85°C  
T
C
= 65°C  
TC = 25°C  
I
D
T
C
= -20°C  
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
Reverse Voltage, VR (V)  
Reverse Voltage, VR (V)