1000 to 1600 nm OPTICAL
FIBER COMMUNICATIONS
φ30 µm
InGaAs
AVALANCHE PHOTO DIODE MODULE
FEATURES
•
SMALL DARK CURRENT:
I
D
= 5 nA
•
SMALL TERMINAL CAPACITANCE:
C
T
= 0.35 pF at 0.9 V
(BR)R
•
HIGH QUANTUM EFFICIENCY:
η
= 90% at
λ
= 1 300 nm, M = 1
η
= 77% at
λ
= 1 550 nm, M = 1
•
HIGH SPEED RESPONSE:
f
c
= 2.5 GHz at M = 10
•
DETECTING AREA SIZE:
φ30 µm
•
COAXIAL MODULE WITH SINGLE MODE FIBER
(SM-9/125)
NDL5531P
SERIES
DESCRIPTION
The NDL5531P Series is an InGaAs avalanche photo diode
module with single mode fiber. It is designed for detectors of
long wavelength transmission systems. The series covers the
wavelength range between 1000 and 1600 nm.
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
V
(BR)R
δ
I
D
I
DM
C
t
f
C
η
S
M
X
F
PARAMETERS AND CONDITIONS
Reverse Breakdown Voltage, I
D
= 100
µA
Temperature Coefficient of Reverse Breakdown
Voltage
1
Dark Current, V
R
= V
(BR)R
x 0.9
Multiplied Dark Current, M = 2 to 10
Terminal Capacitance, V
R
= V
(BR)R
x 0.9, f = 1 MHz
Cut-off Frequency, M = 10
Quantum Efficiency,
λ
= 1 300 nm, M = 1
λ
= 1 550 nm, M = 1
Responsivity,
λ
= 1 300 nm, M = 1
λ
= 1 550 nm, M = 1
Multiplication Factor,
λ
= 1 300 nm, I
PO
= 1.0
µA,
V
R
= V (at I
D
= 1
µA)
Excess Noise Factor
2
,
λ
= 1 300 nm, 1 550 nm,
I
PO
= 1.0
µA,
M = 10, f = 35 MHz, B = 1 MHz
V
(BR)R
< 25°C +
∆T°C
> - V
(BR)R
< 25°C>
∆T°C
> - V
(BR)R
< 25°C>
UNITS
V
%/°C
nA
nA
pF
GHz
%
A/W
2.5
76
65
0.80
0.81
30
90
77
0.94
0.96
40
0.7
5
MIN
50
NDL5531P Series
TYP
70
0.2
5
1
0.35
25
5
0.60
MAX
100
M
Note: 1.
δ
=
2. F = M
X
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
