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NDL5531P1 参数 Datasheet PDF下载

NDL5531P1图片预览
型号: NDL5531P1
PDF下载: 下载PDF文件 查看货源
内容描述: 1000至1600年纳米光纤通信30μm的铟镓砷雪崩光电二极管模块 [1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE]
分类和应用: 光纤光电二极管光电二极管局域网通信
文件页数/大小: 5 页 / 47 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NDL5531P SERIES  
TYPICAL PERFORMANCE CURVES (TC = -40 to +85°C)  
TEMPERATURE DEPENDENCE OF  
DARK CURRENT vs. MULTIPLIED  
DARK CURRENT  
MULTIPLICATION FACTOR  
vs. REVERSE VOLTAGE  
3
-6  
10  
10  
λ = 1 300 nm  
-7  
-8  
-9  
10  
10  
10  
ID at VR = 0.9 V(BR)R  
2
10  
I
DM  
T
T
T
C
= 20˚C  
= 25˚C  
= 65˚C  
C
C
1
0
10  
10  
-10  
-11  
10  
10  
T
C
= 85˚C  
0
20  
40  
60  
80  
100  
-60 -40  
-20  
0
20  
40  
60  
80  
100  
Case Temperature, TC (°C)  
Reverse Voltage, VR (V)  
TERMINAL CAPACITANCE  
vs. REVERSE VOLTAGE  
CUT-OFF FREQUENCY  
vs. MULTIPLICATION FACTOR  
100  
λ = 1 300 nm  
2
10  
1
G x B = 50 GHz  
0.5  
1
0.2  
0.1  
0.1  
1
2
5
10  
20  
50  
100  
1
10  
100  
Multiplication Factor, M  
Reverse Voltage, VR (V)  
EXCESS NOISE FACTOR  
FREQUENCY RESPONSE  
vs. MULTIPLICATION FACTOR  
100  
50  
1300 nm ( ), 1550 nm (  
f = 35 MHz, B = 1 MHz  
)
λ = 1 300 nm  
= 50 Ω  
M = 10  
R
L
9
6
3
0.5  
0.4  
20  
0
10  
5
-3  
-6  
-9  
2
1
0
1.0  
2.0  
3.0  
4.0  
5.0  
1
2
5
10  
20  
50  
100  
Frequency, f (GHz)  
Multiplication Factor, M