2.5 Gb/s OPTICAL FIBER
COMMUNICATIONS
φ50 µm
InGaAs AVALANCHE PHOTO
DIODE MODULE WITH MMF
FEATURES
•
SMALL DARK CURRENT:
I
D
= 5 nA
•
HIGH QUANTUM EFFICIENCY:
η
= 90% at
λ
= 1300 nm, M = 1
η
= 77% at
λ
= 1550 nm, M = 1
•
HIGH SPEED RESPONSE:
f
c
= 2.5 GHz at M = 10
•
DETECTING AREA SIZE:
φ50 µm
•
COAXIAL MODULE WITH MULTIMODE FIBER
(GI-50/125)
•
NDL5521P1 AND NDL5521P2 HAVE A FLANGE
NDL5521P
SERIES
DESCRIPTION
The NDL5521P Series are InGaAs avalanche photo diode
modules with multimode fiber.They are designed for 2.5 Gb/s
optical fiber communication systems and cover the wave-
length range between 1000 and 1600 nm with high efficiency.
These modules are also available with FC-PC connector and
SC-PC connector.
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
V
(BR)R
δ
I
D
I
DM
C
t
f
C
PARAMETERS AND CONDITIONS
Reverse Breakdown Voltage, I
D
= 100
µA
Temperature Coefficient of Reverse Breakdown
Voltage
1
Dark Current, V
R
= V
(BR)R
x 0.9
Multiplied Dark Current, M = 2 to 10
Terminal Capacitance, V
R
= V
(BR)R
x 0.9, f = 1 MHz
Cut-off Frequency,
M=5
M = 10
M = 30
UNITS
V
%/°C
nA
nA
pF
GHz
2.5
2.5
1.0
76
65
0.80
0.81
30
MIN
40
NDL5521P Series
TYP
55
0.20
5
0.50
0.40
3.0
90
77
0.94
0.96
40
0.7
5
dB
30
30
5
0.75
MAX
80
η
S
M
X
F
ORL
Note: 1.
δ
=
Quantum Efficiency,
λ
= 1300 nm, M = 1
λ
= 1550 nm, M = 1
Responsivity,
λ
= 1300 nm, M = 1
λ
= 1550 nm, M = 1
Multiplication Factor,
λ
= 1550 nm, I
PO
= 1.0
µA,
V
R
= V (at I
D
= 1
µA)
Excess Noise Factor,
λ
= 1300 nm, 1550 nm,
I
PO
= 1.0
µA,
M = 10, f = 35 MHz, B = 1 MHz
Optical Return Loss
V
(BR)R
< 25°C +
∆T°C
> - V
(BR)R
< 25°C>
∆T°C
• V
(BR)R
< 25°C>
%
A/W
M
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
