NE856M13
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
VCBO
VCEO
VEBO
PARAMETERS
UNITS
RATINGS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
20
V
12
3
V
IC
mA
mW
°C
100
2
PT
Total Power Dissipation
Junction Temperature
Storage Temperature
140
TJ
150
TSTG
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
FORWARD CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
500
VCE = 10 V
300
200
80
60
100
70
50
40
20
30
20
10
2
4
6
8
10
12
0
1
2
3
5
7
10
20 30
50
Collector Current, IC (mA)
Collector to Emitter Voltage, VCE (V)
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
2/09/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
CEL [ CALIFORNIA EASTERN LABS ]
