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CAT1021SA-42TE13 参数 Datasheet PDF下载

CAT1021SA-42TE13图片预览
型号: CAT1021SA-42TE13
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Supply Management Circuit, Fixed, 1 Channel, CMOS, PDSO8, SOIC-8]
分类和应用: 光电二极管
文件页数/大小: 17 页 / 107 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT1021, CAT1022, CAT1023  
Preliminary Information  
RESET CIRCUIT A.C. CHARACTERISTICS  
Test  
Conditions  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
tPURST  
tRPD  
Reset Timeout  
Note 2  
Note 3  
130  
200  
270  
5
ms  
µs  
VTH to RESET output Delay  
tGLITCH  
MR Glitch  
tMRW  
VCC Glitch Reject Pulse Width  
Manual Reset Glitch Immunity  
MR Pulse Width  
Note 4, 5  
Note 1  
Note 1  
Note 1  
30  
ns  
ns  
µs  
µs  
100  
5
tMRD  
MR Input to RESET Output Delay  
1
tWD  
Watchdog Timeout  
Note 1  
1.0  
1.6  
2.1  
sec  
POWER-UP TIMING5,6  
Test  
Conditions  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
tPUR  
tPUW  
Power-Up to Read Operation  
Power-Up to Write Operation  
270  
270  
ms  
ms  
Notes:  
1. Test Conditions according to AC Test Conditionstable.  
2. Power-up, Input Reference Voltage V = V , Reset Output Reference Voltage and Load according to AC Test ConditionsTable  
CC  
TH  
3. Power-Down, Input Reference Voltage V = V , Reset Output Reference Voltage and Load according to AC Test ConditionsTable  
CC  
TH  
4.  
5. This parameter is characterized initially and after a design or process change that affects the parameter. Not 100% tested.  
6. and t are the delays required from the time V is stable until the specified memory operation can be initiated.  
V
CC  
Glitch Reference Voltage = V ; Based on characterization data  
THmin  
t
PUR  
PUW  
CC  
AC TEST CONDITIONS  
Input pulse voltages  
0.2VCC to 0.8VCC  
10 ns  
Input rise and fall times  
Input reference voltages  
Output reference voltages  
0.3VCC, 0.7VCC  
0.5VCC  
Current Source: IOL = 3mA;  
CL = 100pF  
Output Load  
RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Reference Test Method  
Min  
Max  
Units  
Cycles/Byte  
Years  
(1)  
NEND  
Endurance  
MIL-STD-883, Test Method 1033 1,000,000  
(1)  
TDR  
Data Retention  
ESD Susceptibility  
Latch-Up  
MIL-STD-883, Test Method 1008  
MIL-STD-883, Test Method 3015  
JEDEC Standard 17  
100  
2000  
100  
(1)  
VZAP  
Volts  
(1)(2)  
ILTH  
mA  
Doc. No. 3009, Rev. E  
6
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