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BS616LV1611_08 参数 Datasheet PDF下载

BS616LV1611_08图片预览
型号: BS616LV1611_08
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗CMOS SRAM 1M ×16位 [Very Low Power CMOS SRAM 1M X 16 bit]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 227 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BS616LV1611  
„ ORDERING INFORMATION  
BS616LV1611  
X
X
Z Y Y  
SPEED  
55: 55ns  
PKG MATERIAL  
G: Green, RoHS Compliant  
GRADE  
I: -40oC ~ +85oC  
PACKAGE  
F: BGA-48-0912  
T: TSOP I-48  
Note:  
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does  
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result  
in significant injury or death, including life-support systems and critical medical instruments.  
„ PACKAGE DIMENSIONS  
NOTES:  
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.  
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.  
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.  
SIDE VIEW  
D
0.1  
N
D
E
D1  
E1  
e
D1  
3.375  
48  
12.0  
9.0  
5.25  
3.75  
0.75  
SOLDER BALL 0.35 ±0.05  
VIEW A  
48 mini-BGA (9mm x 12mm)  
Revision  
2.4  
2008  
R0201-BS616LV1611  
9
Oct.