BSI
BS616LV1622
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
(1)
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
0.8
0.8
Vcc+0.3
NAME
-0.5
--
--
--
--
Guaranteed Input Low
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
VIL
V
(3)
Voltage
-0.5
2.0
2.2
Guaranteed Input High
VIH
IIL
V
(3)
Voltage
Vcc+0.3
IN
Input Leakage Current
Output Leakage Current
Vcc = Max, V = 0V to Vcc
--
--
--
--
1
uA
uA
ViL, or
Vcc = Max, CE1 = VIH, or CE2 =
ILO
1
IH
I/O
OE = V , V = 0V to Vcc
Vcc=3V
Vcc=5V
--
--
2.4
2.4
--
--
--
--
0.4
0.4
--
VOL
VOH
OL
Output Low Voltage
Output High Voltage
Vcc = Max, I = 2mA
V
V
Vcc=3V
Vcc=5V
OH
Vcc = Min, I = -1mA
--
(4)
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
70ns
70ns
--
--
--
--
--
--
--
--
37
92
IL
Operating Power Supply CE1 = V and CE2 =
Current
V
IH
ICC
mA
mA
(2)
DQ
, I = 0mA, F =Fmax
1.3
2.5
CE1 = VIH or CE2 = V
, I = 0mA
IL
ICCSB
Standby Current-TTL
DQ
≧
CE1 Vcc-0.2V, or
Vcc=3V
Vcc=5V
--
--
3
20
≦
CE2 0.2V, or
(5)
ICCSB1
Standby Current-CMOS
Vcc - 0.2V
uA
≧
LB and UB
Vcc - 0.2V
15
220
≧
VIN
≦
or VIN 0.2V
1. Typical characteristics are at TA = 25oC.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
2. Fmax = 1/tRC
.
4. Icc_Max. is 46mA(@3.0V) / 115mA(@5.0V) under 55ns operation.
5.IccsB1 is 10uA/110uA at Vcc=3.0V/5.0V and TA=70oC.
Revision 2.1
Jan. 2004
R0201-BS616LV1622
4
BSI [ BRILLIANCE SEMICONDUCTOR ]
