BSI
BS616LV1613
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
(1)
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
0.8
NAME
Guaranteed Input Low
--
--
--
--
-0.5
2.0
--
Vcc=3V
Vcc=3V
VIL
V
(3)
Voltage
Guaranteed Input High
VIH
IIL
Vcc+0.3
V
(3)
Voltage
IN
Input Leakage Current
Output Leakage Current
Vcc = Max, V = 0V to Vcc
1
1
uA
uA
ViL, or
Vcc = Max, CE1 = VIH, or CE2 =
ILO
--
IH
I/O
OE = V , V = 0V to Vcc
Vcc=3V
Vcc=3V
--
VOL
VOH
--
--
Output Low Voltage
Output High Voltage
Vcc = Max, IOL= 2mA
0.4
--
V
V
OH
Vcc = Min, I = -1mA
2.4
(4)
55ns
70ns
--
--
--
--
46
37
IL
Operating Power Supply CE1 = V and CE2 =
Current
V
IH
ICC
Vcc=3V
Vcc=3V
mA
mA
(2)
DQ
, I = 0mA, F =Fmax
CE1 = VIH or CE2 =V
, I = 0mA
IL
--
--
ICCSB
Standby Current-TTL
1.3
DQ
≧
CE1 Vcc-0.2V or
(5)
Vcc=3V
≧
--
ICCSB1
≦
Vcc - 0.2V
Standby Current-CMOS
CE2 0.2V ;VIN
3
uA
20
≦
or VIN 0.2V
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/tRC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 45mA(@55ns) / 36mA(@70ns) during 0~70oC operation.
5. IccsB1 is 10uA at Vcc=3.0V and TA=70oC.
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
(1)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
UNITS
CE1
Vcc - 0.2V or CE2 0.2V,
≧
≦
VDR
Vcc for Data Retention
1.5
--
--
V
IN
IN
V
Vcc - 0.2V or V
0.2V
≦
≧
(3)
CE1
Vcc - 0.2V or CE2 0.2V,
≧
≦
5
ICCDR
Data Retention Current
--
0
1.5
uA
IN
IN
V
Vcc - 0.2V or V
0.2V
≦
≧
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
3. IccDR(Max.) is 2.5uA at TA=70OC.
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
V
DR ≥ 1.5V
Vcc
Vcc
Vcc
CE1
t
R
t
CDR
≥
CE1 Vcc - 0.2V
VIH
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
VDR ≧ 1.5V
Vcc
Vcc
Vcc
t
R
t
CDR
CE2 ≦ 0.2V
VIL
VIL
CE2
Revision 1.1
R0201-BS616LV1613
3
Jan.
2004