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BS616LV1613FCP70 参数 Datasheet PDF下载

BS616LV1613FCP70图片预览
型号: BS616LV1613FCP70
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 1M ×16位 [Very Low Power/Voltage CMOS SRAM 1M X 16 bit]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 8 页 / 256 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI  
BS616LV1613  
„ DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )  
PARAMETER  
(1)  
UNITS  
PARAMETER  
TEST CONDITIONS  
MIN. TYP.  
MAX.  
0.8  
NAME  
Guaranteed Input Low  
--  
--  
--  
--  
-0.5  
2.0  
--  
Vcc=3V  
Vcc=3V  
VIL  
V
(3)  
Voltage  
Guaranteed Input High  
VIH  
IIL  
Vcc+0.3  
V
(3)  
Voltage  
IN  
Input Leakage Current  
Output Leakage Current  
Vcc = Max, V = 0V to Vcc  
1
1
uA  
uA  
ViL, or  
Vcc = Max, CE1 = VIH, or CE2 =  
ILO  
--  
IH  
I/O  
OE = V , V = 0V to Vcc  
Vcc=3V  
Vcc=3V  
--  
VOL  
VOH  
--  
--  
Output Low Voltage  
Output High Voltage  
Vcc = Max, IOL= 2mA  
0.4  
--  
V
V
OH  
Vcc = Min, I = -1mA  
2.4  
(4)  
55ns  
70ns  
--  
--  
--  
--  
46  
37  
IL  
Operating Power Supply CE1 = V and CE2 =  
Current  
V
IH  
ICC  
Vcc=3V  
Vcc=3V  
mA  
mA  
(2)  
DQ  
, I = 0mA, F =Fmax  
CE1 = VIH or CE2 =V  
, I = 0mA  
IL  
--  
--  
ICCSB  
Standby Current-TTL  
1.3  
DQ  
CE1 Vcc-0.2V or  
(5)  
Vcc=3V  
--  
ICCSB1  
Vcc - 0.2V  
Standby Current-CMOS  
CE2 0.2V ;VIN  
3
uA  
20  
or VIN 0.2V  
1. Typical characteristics are at TA = 25oC.  
2. Fmax = 1/tRC .  
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.  
4. Icc_Max. is 45mA(@55ns) / 36mA(@70ns) during 0~70oC operation.  
5. IccsB1 is 10uA at Vcc=3.0V and TA=70oC.  
„ DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )  
(1)  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
MIN. TYP.  
MAX.  
UNITS  
CE1  
Vcc - 0.2V or CE2 0.2V,  
VDR  
Vcc for Data Retention  
1.5  
--  
--  
V
IN  
IN  
V
Vcc - 0.2V or V  
0.2V  
(3)  
CE1  
Vcc - 0.2V or CE2 0.2V,  
5
ICCDR  
Data Retention Current  
--  
0
1.5  
uA  
IN  
IN  
V
Vcc - 0.2V or V  
0.2V  
Chip Deselect to Data  
Retention Time  
tCDR  
tR  
--  
--  
--  
--  
ns  
ns  
See Retention Waveform  
(2)  
Operation Recovery Time  
TRC  
1. Vcc = 1.5V, TA = + 25OC  
3. IccDR(Max.) is 2.5uA at TA=70OC.  
2. tRC = Read Cycle Time  
„ LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )  
Data Retention Mode  
V
DR 1.5V  
Vcc  
Vcc  
Vcc  
CE1  
t
R
t
CDR  
CE1 Vcc - 0.2V  
VIH  
VIH  
„ LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )  
Data Retention Mode  
VDR 1.5V  
Vcc  
Vcc  
Vcc  
t
R
t
CDR  
CE2 0.2V  
VIL  
VIL  
CE2  
Revision 1.1  
R0201-BS616LV1613  
3
Jan.  
2004