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BS616LV1613FC 参数 Datasheet PDF下载

BS616LV1613FC图片预览
型号: BS616LV1613FC
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 1M ×16位 [Very Low Power/Voltage CMOS SRAM 1M X 16 bit]
分类和应用: 静态存储器
文件页数/大小: 8 页 / 256 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI  
„ PIN DESCRIPTIONS  
Name  
BS616LV1613  
Function  
A0-A19 Address Input  
These 20 address inputs select one of the 1,048,576 x 16-bit words in the RAM.  
CE1 Chip Enable 1 Input  
CE2 Chip Enable 2 Input  
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when  
data read from or write to the device. If either chip enable is not active, the device  
is  
deselected and is in a standby power mode. The DQ pins will be in the high  
impedance state when the device is deselected.  
WE Write Enable Input  
OE Output Enable Input  
The write enable input is active LOW and controls read and write operations. With the  
chip selected, when WE is HIGH and OE is LOW, output data will be present on the  
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the  
selected memory location.  
The output enable input is active LOW. If the output enable is active while the chip is  
selected and the write enable is inactive, data will be present on the DQ pins and they  
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.  
LB and UB Data Byte Control Input  
D0 - D15 Data Input/Output Ports  
Lower byte and upper byte data input/output control pins.  
These 16 bi-directional ports are used to read data from or write data into the RAM.  
Vcc  
Vss  
Power Supply  
Ground  
„ TRUTH TABLE  
MODE  
CE1  
H
CE2  
X
WE  
X
OE  
X
LB  
X
X
X
L
UB  
X
X
X
L
D0~D7  
High Z  
High Z  
High Z  
Dout  
High Z  
Dout  
Din  
D8~D15  
High Z  
High Z  
High Z  
Dout  
Vcc CURRENT  
ICCSB , ICCSB1  
Not selected  
(Power Down)  
X
L
X
X
ICCSB , ICCSB1  
L
Output Disabled  
Read  
H
H
H
ICC  
ICC  
ICC  
ICC  
ICC  
ICC  
ICC  
L
L
H
H
H
L
L
H
L
L
Dout  
H
L
High Z  
Din  
L
Write  
X
H
L
L
X
Din  
H
Din  
X
„ OPERATING RANGE  
„ ABSOLUTE MAXIMUM RATINGS(1)  
AMBIENT  
SYMBOL  
PARAMETER  
RATING  
UNITS  
V
RANGE  
Vcc  
TEMPERATURE  
Terminal Voltage with  
Respect to GND  
-0.5 to  
Vcc+0.5  
VTERM  
Commercial  
Industrial  
0O C to +70O C  
2.7V ~ 3.6V  
2.7V ~ 3.6V  
Temperature Under Bias  
Storage Temperature  
Power Dissipation  
-40 to +85  
-60 to +150  
1.0  
O C  
BIAS  
T
T
-40O C to +85O C  
O C  
STG  
W
PT  
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)  
DC Output Current  
20  
mA  
IOUT  
SYMBOL  
IN  
PARAMETER CONDITIONS MAX.  
UNIT  
Input  
IN  
=0V  
C
V
10  
pF  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM  
RATINGS may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at these  
or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
Capacitance  
Input/Output  
Capacitance  
DQ  
C
I/O  
=0V  
V
12  
pF  
1. This parameter is guaranteed and not 100% tested.  
Revision 1.1  
Jan. 2004  
R0201-BS616LV1613  
2