BSI
BS616LV1013
OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS(1)
AMBIENT
TEMPERATURE
0 O C to +70 O
SYMBOL
VTERM
TBIAS
TSTG
PARAMETER
RATING
UNITS
RANGE
Vcc
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
V
Commercial
Industrial
C
2.7V ~ 3.6V
2.7V ~ 3.6V
Temperature Under Bias
Storage Temperature
Power Dissipation
-40 to +125
-60 to +150
1.0
O C
O C
W
-40 O C to +85 O
C
PT
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
DC Output Current
20
mA
IOUT
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
Input
CIN
VIN=0V
6
pF
Capacitance
Input/Output
Capacitance
CDQ
VI/O=0V
8
pF
maximum rating conditions for extended periods may affect 1. This parameter is guaranteed and not 100% tested.
reliability.
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER
(1)
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
NAME
Guaranteed Input Low
Voltage
Vcc=3.0V
Vcc=3.0V
IL
V
-0.5
--
0.8
V
(2)
Guaranteed Input High
IH
V
--
--
Vcc+0.2
1
V
(2)
2.0
--
Voltage
IN
IL
I
Input Leakage Current
Vcc = Max, V = 0V to Vcc
uA
IH
IH
Vcc = Max, CE = V , or OE = V ,
LO
I
Output Leakage Current
--
--
1
uA
I/O
V
= 0V to Vcc
Vcc=3.0V
Vcc=3.0V
OL
OL
V
Output Low Voltage
Output High Voltage
Vcc = Max, I = 2mA
--
--
--
0.4
--
V
V
OH
OH
V
Vcc = Min, I = -1mA
2.4
Operating Power Supply
Current
(3)
Vcc=3.0V
Vcc=3.0V
IL
DQ
CC
I
CE = V , I = 0mA, F = Fmax
--
--
--
mA
mA
uA
--
--
20
1
IH
DQ
CCSB
I
Standby Current-TTL
CE = V , I = 0mA
CE
Vcc -0.2V,
Vcc - 0.2V or V
≧
CCSB1
I
Standby Current-CMOS
Vcc=3.0V
0.02
0.5
IN
IN
V
0.2V
≦
≧
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
ICCDR
Data Retention Current
--
0
0.02
0.3
uA
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
Revision 1.1
R0201-BS616LV1013
3
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
