BSI
BS616LV2021
DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)
PARAMETER
(1)
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX.
UNITS
NAME
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
Guaranteed Input Low
Voltage(2)
VIL
-0.5
--
0.8
V
2.0
2.2
Guaranteed Input High
Voltage(2)
Vcc+0.2
IH
V
--
--
--
V
Input Leakage Current
Output Leakage Current
Vcc = Max, VIN = 0V to Vcc
IIL
--
1
1
uA
uA
IH
IL
Vcc = Max, CE1 = V or CE2=V or OE = VIH
,
OL
I
--
V
I/O = 0V to Vcc
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
OL
Output Low Voltage
Output High Voltage
Vcc = Max, I = 2mA
VOL
VOH
--
--
--
0.4
--
V
V
OH
Vcc = Min, I = -1mA
2.4
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
--
--
--
--
--
--
--
--
20
40
0.5
1
Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH
ICC
mA
mA
(3)
DQ
Current
I
= 0mA, F =Fmax
Vcc = Max, CE1 = VIH or CE2=VIL
DQ = 0mA
Standby Current-TTL
CCSB
I
I
Vcc = Max, CE1ЊVcc-0.2V or
CE2 0.2V,
Vcc=3V
Vcc=5V
--
--
0.1
0.6
0.7
6
Љ
Standby Current-CMOS
CCSB1
I
uA
Other inputs Vcc - 0.2V or
Њ
INЉ
V
0.2V
o
1. Typical characteristics are at TA = 25 C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
Revision 2.4
April 2002
R0201-BS616LV2021
4
BSI [ BRILLIANCE SEMICONDUCTOR ]
