BSI
BS616LV4015
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
SYMBOL
PARAMETER
RATING
UNITS
AMBIENT
TEMPERATURE
RANGE
Vcc
Terminal Voltage with
-0.5 to
V
TERM
V
Respect to GND
Vcc+0.5
Commercial
Industrial
0 O C to +70O
-40O C to +85O
C
4.5V ~ 5.5V
4.5V ~ 5.5V
Temperature Under Bias
Storage Temperature
Power Dissipation
-40 to +125
-60 to +150
1.0
O C
O C
W
BIAS
STG
T
T
T
P
C
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
DC Output Current
20
mA
OUT
I
SYMBOL
CIN
PARAMETER CONDITIONS MAX.
UNIT
pF
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
Input
VIN=0V
6
Capacitance
Input/Output
Capacitance
CDQ
VI/O=0V
8
pF
1. This parameter is guaranteed and not tested.
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
PARAMETER
(1 )
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
0.8
NAME
Guaranteed Input Low
IL
Vcc=5.0V
Vcc=5.0V
Voltage(2)
V
-0.5
--
--
--
V
V
Guaranteed Input High
IH
(2)
V
2.2
--
Vcc+0.2
1
Voltage
IL
I
Input Leakage Current
Vcc = Max, V = 0V to Vcc
uA
IN
IH
,
Vcc = Max, CE = V , or OE = V
IH
OL
I
Output Leakage Current
--
--
1
uA
I/O
V
= 0V to Vcc
OL
Vcc=5.0V
Vcc=5.0V
V
Output Low Voltage
Output High Voltage
Vcc = Max, IOL = 2mA
Vcc = Min, IOH = -1mA
--
--
--
0.4
--
V
V
OH
V
2.4
Operating Power Supply
Current
CE = V , IDQ = 0mA, F = Fmax(3)
--
--
--
--
45
2
mA
mA
CC
IL
Vcc=5.0V
Vcc=5.0V
I
CCSB
I
Standby Current-TTL
CE = VIH , IDQ= 0mA
CE
VIN
Vcc-0.2V,
Њ
Њ
CCSB1
Vcc=5.0V
I
Standby Current-CMOS
--
1.5
15
uA
0.2V
INЉ
Vcc - 0.2V or V
o
1. Typical characteristics are at TA = 25 C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
(1)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
UNITS
CE
Vcc - 0.2V
Њ
Њ
VDR
Vcc for Data Retention
1.5
--
--
V
IN
IN
V
Vcc - 0.2V or V
0.2V
Љ
Љ
CE
Vcc -0.2V
Vcc - 0.2V or V
Њ
Њ
ICCDR
Data Retention Current
--
0
0.1
1.5
uA
IN
IN
V
0.2V
Chip Deselect to Data
Retention Time
Operation Recovery Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
TRC
O
1. Vcc = 1.5V, TA = + 25 C
2. tRC = Read Cycle Time
Revision 2.4
April 2002
R0201-BS616LV4015
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
