BSI
BS616LV1611
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
(1)
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
0.8
0.8
Vcc+0.3
NAME
-0.5
--
--
--
--
Guaranteed Input Low
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
VIL
V
(3)
Voltage
-0.5
2.0
2.2
Guaranteed Input High
VIH
IIL
V
(3)
Voltage
Vcc+0.3
IN
Input Leakage Current
Output Leakage Current
Vcc = Max, V = 0V to Vcc
--
--
--
--
1
uA
uA
ViL, or
Vcc = Max, CE1 = VIH, or CE2 =
ILO
1
IH
I/O
OE = V , V = 0V to Vcc
Vcc=3V
Vcc=5V
--
--
2.4
2.4
--
--
--
--
0.4
0.4
--
VOL
VOH
OL
Output Low Voltage
Output High Voltage
Vcc = Max, I = 2mA
V
V
Vcc=3V
Vcc=5V
OH
Vcc = Min, I = -1mA
--
(4)
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
70ns
70ns
--
--
--
--
--
--
--
--
37
92
IL
Operating Power Supply CE1 = V and CE2 =
Current
V
IH
ICC
mA
mA
(2)
DQ
, I = 0mA, F =Fmax
1.3
2.5
CE1 = VIH or CE2 =V
, I = 0mA
IL
ICCSB
Standby Current-TTL
DQ
≧
CE1 Vcc-0.2V or
Vcc=3V
Vcc=5V
--
--
3
20
(5)
≧
ICCSB1
≦
Vcc - 0.2V
Standby Current-CMOS
CE2 0.2V ;VIN
uA
≦
or VIN 0.2V
15
220
1. Typical characteristics are at TA = 25oC.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 46mA(@3.0V) / 115mA(@5.0V) under 55ns operation.
5.IccsB1 is 10uA/110uA at Vcc=3.0V/5.0V and TA=70oC.
2. Fmax = 1/tRC
.
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
(1)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
UNITS
CE1
Vcc - 0.2V or CE2 0.2V,
≧
≦
VDR
Vcc for Data Retention
1.5
--
--
V
IN
IN
V
Vcc - 0.2V or V
0.2V
≦
≧
(3)
CE1
Vcc - 0.2V or CE2 0.2V,
≧
≦
5.0
ICCDR
Data Retention Current
--
0
1.5
uA
IN
IN
V
Vcc - 0.2V or V
0.2V
≦
≧
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
3. IccDR(Max.) is 2.5uA at TA=70OC.
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
V
DR ≥ 1.5V
Vcc
Vcc
Vcc
CE1
t
R
t
CDR
≥
CE1 Vcc - 0.2V
VIH
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
VDR ≧ 1.5V
Vcc
Vcc
Vcc
t
R
t
CDR
CE2 ≦ 0.2V
VIL
VIL
CE2
Revision 2.1
R0201-BS616LV1611
3
Jan.
2004