BS616LV2019
OPERATING RANGE
BSI
ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
PARAMETER
RATING
UNITS
AMBIENT
TEMPERATURE
0 O C to +70O
RANGE
Vcc
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
-0.5 to
V
V
TERM
cc
V
V
T
T
P
Commercial
Industrial
C
2.7V ~ 3.6V
2.7V ~ 3.6V
Power Supply
Vcc+0.5
-40O C to +85O
C
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
-40 to +85
-60 to +150
1.0
O C
O C
W
BIAS
STG
T
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
20
mA
SYMBOL
PARAMETER
CONDITIONS
MAX. UNIT
OUT
I
Input
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
IN
C
IN
V
=0V
6
8
pF
pF
Capacitance
Input/Output
Capacitance
CDQ
VI/O=0V
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
TYP.(1) MAX.
UNITS
PARAMETER
TEST CONDITIONS
MIN.
NAME
Guaranteed Input Low
Voltage(2)
VIL
Vcc =3.0V
Vcc =3.0V
-0.3
--
0.8
V
Guaranteed Input High
VIH
IIL
2.0
--
--
--
Vcc+0.3
1
V
Voltage(2)
IN
Input Leakage Current
Output Leakage Current
Vcc = Max, V = 0V to Vcc
uA
Vcc = Max,CE = VIH or CE2 (4) = VIL or OE = VIH
,
ILO
--
--
1
uA
V
I/O = 0V to Vcc
OL
VOL
VOH
Output Low Voltage
Output High Voltage
Vcc = Max, I = 2.0mA
Vcc =3.0V
Vcc =3.0V
--
--
--
0.4
--
V
V
OH
Vcc = Min, I = -1.0mA
2.4
(4)
70ns
55ns
16
25
IL
IH
Operating Power Supply CE = V , CE2 = V
(6)
ICC
3.0 V
--
--
--
--
--
mA
mA
uA
Current
I
DQ = 0mA, F = Fmax(3)
(4)
IH
IL
CE=V or CE2 =V
ICCSB
Standby Current-TTL
Vcc =3.0V
0.5
5.0
I
DQ = 0mA
CE≧Vcc-0.2V or CE2(4)≦0.2V,
IN≧Vcc-0.2V or VIN≦0.2V
(5)
ICCSB1
Standby Current-CMOS
Vcc =3.0V
0.3
V
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC 4. 48B BGA ignore CE2 condition.
5.IccsB1_Max. is 3.0uA at Vcc=3.0V and TA=70oC.
6. Icc_Max. is 23mA(@55ns) / 15mA(@70ns) at Vcc=3.0V/ 0~70oC.
.
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
CE ≧ Vcc - 0.2V or CE2 ≦ 0.2V(3)
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
,
,
VDR
Vcc for Data Retention
1.5
--
--
V
CE ≧ Vcc - 0.2V or CE2 ≦ 0.2V(3)
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
(4)
ICCDR
Data Retention Current
--
0
0.1
1.0
uA
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
3. 48B BGA ignore CE2 condition.
2. tRC = Read Cycle Time
4. IccDR is 0.7uA at TA=70oC.
Revision 1.2
R0201-BS616LV2019
3
May
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
