BS616LV2016
OPERATING RANGE
BSI
ABSOLUTE MAXIMUM RATINGS(1)
AMBIENT
TEMPERATURE
0 O C to +70O
SYMBOL
PARAMETER
RATING
UNITS
RANGE
Vcc
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
V
TERM
BIAS
STG
T
V
T
T
P
Commercial
Industrial
C
2.4V ~ 5.5V
2.4V ~ 5.5V
Temperature Under Bias
Storage Temperature
Power Dissipation
-40 to +85
-60 to +150
1.0
O C
O C
W
-40O C to +85O
C
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
DC Output Current
20
mA
OUT
I
SYMBOL
PARAMETER
CONDITIONS
MAX. UNIT
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Input
IN
IN
C
V
=0V
6
8
pF
pF
Capacitance
Input/Output
Capacitance
CDQ
VI/O=0V
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
UNITS
PARAMETER
TEST CONDITIONS
Vcc =3.0V
MIN.
TYP. (1) MAX.
NAME
Guaranteed Input Low
Voltage(3)
VIL
-0.5
--
--
0.8
V
Vcc =5.0V
Vcc =3.0V
Vcc =5.0V
2.0
2.2
--
Guaranteed Input High
Voltage(3)
IH
cc+0.3
V
V
V
IIL
Input Leakage Current
Output Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
--
1
1
uA
uA
Vcc = Max,CE = VIH or OE = VIH
,
LO
I
--
V
I/O = 0V to Vcc
Vcc =3.0V
Vcc =5.0V
Vcc =3.0V
Vcc =5.0V
OL
OL
V
V
Output Low Voltage
Output High Voltage
Vcc = Max, I = 2.0mA
--
--
0.4
--
V
OH
OH
Vcc = Min, I = -1.0mA
2.4
--
--
--
--
V
Vcc =3V
Vcc =5V
70ns
70ns
25
55
Operating Power Supply CE = VIL
Current
,
(5)
CC
I
mA
mA
I
DQ = 0mA, F = Fmax(2)
Vcc =3.0V
0.5
1.0
IH
CE=V
ICCSB
Standby Current-TTL
--
I
DQ = 0mA
Vcc =5.0V
Vcc =3.0V
Vcc =5.0V
0.3
1.0
5
,
CE≧Vcc-0.2V
V
(4)
CCSB1
I
Standby Current-CMOS
--
uA
IN≧Vcc-0.2V or VIN≦0.2V
30
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/tRC
.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4.IccsB1_Max. is 3uA/10uA at Vcc=3V/5V and TA=70oC.
5. Icc_Max. is 30mA(@3V) / 62mA(@5V) under 55ns operation.
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
(3)
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
ICCDR
Data Retention Current
--
0
0.1
1.0
uA
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
2. tRC = Read Cycle Time
3
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
3. IccDR_MAX. is 0.7uA at TA=70oC.
Revision 1.1
Jan.
R0201-BS616LV2016
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
