BSI
BS616LV1011
OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS(1)
AMBIENT
TEMPERATURE
0 O C to +70 O
SYMBOL
PARAMETER
RATING
UNITS
RANGE
Vcc
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
-0.5 to
V
V
TERM
cc
V
V
T
T
P
Commercial
Industrial
C
2.4V ~ 5.5V
2.4V ~ 5.5V
Power Supply Voltage
Temperature Under Bias
Storage Temperature
Power Dissipation
Vcc+0.5
-40 O C to +85 O
C
-40 to +85
-60 to +150
1.0
O C
O C
W
BIAS
STG
T
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
DC Output Current
20
mA
OUT
I
Input
CIN
VIN=0V
6
pF
Capacitance
Input/Output
Capacitance
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
CDQ
VI/O=0V
8
pF
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
MIN. TYP. (1) MAX.
UNITS
PARAMETER
TEST CONDITIONS
NAME
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Guaranteed Input Low
Voltage(2)
VIL
-0.5
--
0.8
V
Guaranteed Input High
2.0
2.2
VIH
IIL
--
--
Vcc+0.3
1
V
Voltage(3)
Input Leakage Current
Output Leakage Current
Vcc = Max, VIN = 0V to Vcc
Vcc = Max, CE = VIH, or OE = VIH
--
uA
,
ILO
--
--
1
uA
V
I/O = 0V to Vcc
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
VOL
VOH
Output Low Voltage
Output High Voltage
Vcc = Max, IOL = 2mA
Vcc = Min, IOH = -1mA
--
--
--
0.4
--
V
V
2.4
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
--
--
--
--
--
--
--
--
18
38
1
Operating Power Supply CE = VIL, IDQ = 0mA,
Current
(6)
ICC
70ns
mA
mA
uA
F = Fmax(4)
--
ICCSB
Standby Current-TTL
CE = VIH, IDQ = 0mA
CE ≧ Vcc-0.2V,
--
2
0.4
1.3
2.5
8
(5)
ICCSB1
Standby Current-CMOS
V
IN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1. Typical characteristics are at TA = 25oC.
3. Overshoot : Vcc+1.5V in case of pulse width ≦20ns.
5. IccsB1_Max. is 1.3uA/4.0uA at Vcc=3.0V/5.0V and TA=70oC.
2. Undershoot : -1.5V in case of pulse width ≦20ns.
4. Fmax = 1/tRC
6. Icc_Max. is 23mA(@3V)/ 50mA(@5V) under 55ns operation.
.
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1) MAX.
UNITS
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
(3)
ICCDR
Data Retention Current
--
0
0.15
0.8
uA
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
3. IccDR_MAX. is 0.45uA at TA=70OC.
2. tRC = Read Cycle Time
Revision 1.0
R0201-BS616LV1011
3
Apr.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
