BSI
BS616LV4011
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
AMBIENT
SYMBOL
PARAMETER
RATING
UNITS
V
RANGE
Vcc
TEMPERATURE
Terminal Voltage with
-0.5 to
TERM
V
Respect to GND
Vcc+0.5
Commercial
Industrial
0O C to +70O C
-40O C to +85O C
2.4V ~ 5.5V
2.4V ~5.5V
Temperature Under Bias
Storage Temperature
Power Dissipation
-40 to +125
-60 to +150
1.0
O C
BIAS
STG
T
T
T
P
O C
W
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
DC Output Current
20
mA
OUT
I
SYMBOL
PARAMETER CONDITIONS MAX.
UNIT
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
Input
CIN
VIN=0V
I/O
6
8
pF
Capacitance
Input/Output
Capacitance
DQ
C
V
=0V
pF
1. This parameter is guaranteed and not tested.
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
PARAMETER
(1)
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
NAME
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Guaranteed Input Low
0.8
IL
V
-0.5
--
V
V
(2)
Voltage
2.0
2.2
Vcc+0.
Guaranteed Input High
IH
V
--
--
--
Voltage(2)
2
1
IL
I
IN
Input Leakage Current Vcc = Max, V = 0V to Vcc
--
--
--
uA
IH
IH
,
,
Vcc = Max, CE = V or OE = V
Output Leakage Current
1
0.4
--
OL
I
uA
V
I/O
V
= 0V to Vcc
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
OL
V
OL
Vcc = Max, I = 2mA
--
--
Output Low Voltage
Output High Voltage
OH
V
OH
Vcc = Min, I = -1mA
2.4
V
20
45
1
2
1.5
--
--
--
--
--
--
--
--
--
Operating Power Supply
Current
(3)
CC
I
IL DQ
CE = V ,I = 0mA,F = Fmax
mA
mA
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Standby Current TTL
-
CCSB
I
IH
DQ
CE = V ,I = 0mA
0.25
1.5
CE
Vcc -0.2V,
Vcc- 0.2V or V
Њ
Standby Current CMOS
-
CCSB1
I
uA
IN
V
0.2V
IN
Љ
Њ
Vcc=5.0V
15
--
o
1. Typical characteristics are at TA = 25 C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
CE Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
CE Њ Vcc - 0.2V
ICCDR
Data Retention Current
--
0
0.1
1
uA
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
Chip Deselect to Data
Retention Time
Operation Recovery Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
TRC
O
1. Vcc = 1.5V, TA = + 25 C
2. tRC = Read Cycle Time
Revision 2.4
April 2002
R0201-BS616LV4011
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
