BSI
BS616LV4010
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
SYMBOL
PARAMETER
RATING
UNITS
AMBIENT
TEMPERATURE
RANGE
Vcc
Terminal Voltage with
-0.5 to
V
TERM
V
Respect to GND
Vcc+0.5
Commercial
Industrial
0 O C to +70O
-40 O C to +85O
C
2.7V ~ 3.6V
2.7V ~ 3.6V
Temperature Under Bias
Storage Temperature
Power Dissipation
-40 to +125
-60 to +150
1.0
O C
O C
W
BIAS
T
T
P
C
STG
T
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
DC Output Current
20
mA
OUT
I
SYMBOL
PARAMETER CONDITIONS MAX.
UNIT
Input
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
IN
C
IN
=0V
V
6
8
pF
Capacitance
Input/Output
Capacitance
DQ
C
I/O
=0V
V
pF
1. This parameter is guaranteed and not tested.
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
PARAMETER
(1 )
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
NAME
Guaranteed Input Low
IL
Vcc=3.0V
Vcc=3.0V
(2)
V
-0.5
2.0
--
--
0.8
V
V
Voltage
Guaranteed Input High
IH
V
(2)
--
--
Vcc+0.2
1
Voltage
Vcc = Max, VIN = 0V to Vcc
IL
Vcc=3.0V
I
Input Leakage Current
uA
,
Vcc = Max, CE = VIH, or OE = VIH
OL
OL
I
Output Leakage Current
Output Low Voltage
Output High Voltage
--
--
--
--
--
1
0.4
--
uA
V
I/O
V
= 0V toVcc
Vcc=3.0V
Vcc=3.0V
OL
V
Vcc = Max, I = 2mA
OH
V
Vcc = Min, IOH = -1mA
2.4
V
(3)
Operating Power Supply
Current
IL
DQ
CE = V , I = 0mA, F =Fmax
CC
Vcc=3.0V
Vcc=3.0V
I
--
--
--
--
20
1
mA
mA
CCSB
I
Standby Current-TTL
CE = VIH, IDQ = 0mA
Њ
CE Vcc-0.2V,
CCSB1
Vcc=3.0V
I
Standby Current-CMOS
--
0.5
8
uA
IN
Њ
V
Vcc - 0.2V or VIN 0.2V
Љ
o
1. Typical characteristics are at TA = 25 C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
(1)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
UNITS
CE
Vcc - 0.2V
Њ
Њ
VDR
Vcc for Data Retention
1.5
--
--
V
IN
IN
V
Vcc - 0.2V or V
0.2V
Љ
Љ
CE
Vcc - 0.2V
Vcc - 0.2V or V
Њ
Њ
ICCDR
Data Retention Current
--
0
0.3
1
uA
IN
IN
V
0.2V
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
O
1. Vcc = 1.5V, TA = + 25 C
2. tRC = Read Cycle Time
Revision 2.3
April. 2002
R0201-BS616LV4010
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
