BSI
BS616LV2025
AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 5.0V )
WRITE CYCLE
JEDEC
PARAMETER
NAME
BS616LV2025-70
MIN. TYP. MAX.
BS616LV2025-55
UNIT
PARAMETER
NAME
DESCRIPTION
MIN. TYP. MAX.
tAVAX
tE1LWH
tAVWL
tAVWH
tWLWH
tWHAX
tBW
tWLQZ
tDVWH
tWHDX
tGHQZ
tWC
tCW
tAS
tAW
tWP
tWR
tBW
tWHZ
tDW
tDH
Write Cycle Time
70
70
0
70
35
0
30
0
30
0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
30
--
--
55
55
0
55
30
0
25
0
25
0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
25
--
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write recovery Time
(CE2, CE1,WE)
Date Byte Control to End of Write
Write to Output in High Z
(LB,UB)
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
tOHZ
0
30
0
25
tWHOX
tOW
End of Write to Output Active
5
--
--
5
--
--
ns
NOTE :
1. tBW is 30ns/25ns (@speed=70ns/55ns) with address toggle. ; tBW is 70ns/55ns (@speed=70ns/55ns) without address toggle .
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t
WC
ADDRESS
OE
(3)
t
WR
(5)
(5)
CE2
CE1
(11)
CW
t
t
BW
(5)
LB,UB
t
AW
(3)
t
WP
(2)
t
AS
WE
(4,10)
t
OHZ
D OUT
t
DH
t
DW
D IN
Revision 2.4
April 2002
R0201-BS616LV2025
8
BSI [ BRILLIANCE SEMICONDUCTOR ]
