BSI
BS616LV2023
DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)
PARAMETER
(1)
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNITS
NAME
Guaranteed Input Low
Vcc=3.0V
Vcc=3.0V
IL
V
-0.5
2.0
--
--
0.8
V
V
Voltage(2)
Guaranteed Input High
Voltage(2)
V IH
Vcc+0.2
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
IL
I
I
--
--
--
--
1
1
uA
uA
IH
IL
IH
,
Vcc = Max, CE1 = V or CE2=V or OE = V
Output Leakage Current
OL
VI/O = 0V to Vcc
Vcc=3.0V
Vcc=3.0V
OL
Output Low Voltage
Output High Voltage
Vcc = Max, I = 2mA
OL
V
V
--
--
--
0.4
--
V
V
OH
Vcc = Min, I = -1mA
OH
2.4
Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH
Vcc=3.0V
Vcc=3.0V
CC
I
--
--
--
--
20
1
mA
mA
(3)
DQ
I
Current
= 0mA, F =Fmax
Vcc = Max, CE1 = VIHor CE2=VIL
Standby CurrentΓTL
I CCSB
DQ
I
= 0mA
Њ
Vcc = Max, CE1 Vcc-0.2V or
Standby CurrentΓMOS CE2 0.2V ,
Љ
Vcc=3.0V
I CCSB1
--
0.1
0.7
uA
Other inputs Vcc - 0.2V or VINЉ0.2V
Њ
o
1. Typical characteristics are at TA = 25 C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
Revision 2.4
April 2002
R0201-BS616LV2023
4
BSI [ BRILLIANCE SEMICONDUCTOR ]
