BS616LV2013
BSI
AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V )
WRITE CYCLE
JEDEC
PARAMETER
BS616LV2013-70
MIN. TYP. MAX.
BS616LV2013-10
UNIT
PARAMETER
DESCRIPTION
Write Cycle Time
MIN. TYP. MAX.
NAME
NAME
t
70
70
0
--
--
--
--
--
--
--
--
--
--
--
--
--
100
100
0
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWC
tCW
tAS
AVAX
t
Chip Select to End of Write
Address Setup Time
E1LWH
t
--
--
AVWL
t
Address Valid to End of Write
Write Pulse Width
70
35
0
--
100
50
0
--
tAW
tWP
tWR
AVWH
t
t
--
--
WLWH
Write recovery Time
(CE,WE)
(LB,UB)
--
--
WHAX
(1)
t
Date Byte Control to End of Write
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
30
0
--
40
0
--
tBW
BW
t
30
--
40
--
tWHZ
tDW
tDH
WLQZ
t
30
0
40
0
DVWH
t
--
--
WHDX
t
0
30
0
40
tOHZ
GHQZ
tWHOX
tOW
End of Write to Output Active
5
--
--
10
--
--
ns
NOTE :
1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle. ; tBW is 70ns/100ns (@speed=70ns/100ns) without address toggle.
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t
WC
ADDRESS
OE
(3)
t
WR
(11)
CW
t
(5)
CE
t
BW
LB,UB
WE
t
AW
(3)
t
WP
(2)
t
AS
(4,10)
t
OHZ
D OUT
t
DH
t
DW
D IN
Revision 2.5
April 2002
R0201-BS616LV2013
6
BSI [ BRILLIANCE SEMICONDUCTOR ]
