BS616LV2019
n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
READ CYCLE
CYCLE TIME : 55ns CYCLE TIME : 70ns
(VCC=2.7~3.6V) (VCC=2.4~3.6V)
MIN. TYP. MAX. MIN. TYP. MAX.
JEDEC
PARAMETER
NAME
PARANETER
DESCRIPTION
UNITS
NAME
tAVAX
tAVQX
tELQV1
tELQV2
tBLQV
tGLQV
tELQX1
tELQX2
tBLQX
tGLQX
tEHQZ1
tEHQZ2
tBHQZ
tGHQZ
tAVQX
tRC
tAA
Read Cycle Time
55
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
55
55
55
55
30
--
70
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
70
70
70
70
35
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Select Access Time
(CE)
tACS1
tACS2
tBA
--
--
Chip Select Access Time
(CE2)
--
--
Data Byte Control Access Time
(LB, UB)
--
--
tOE
Output Enable to Output Valid
Chip Select to Output Low Z
--
--
(CE)
tCLZ1
tCLZ2
tBE
10
10
10
10
5
Chip Select to Output Low Z
(CE2) 10
--
--
Data Byte Control to Output Low Z (LB, UB)
Output Enable to Output Low Z
10
5
--
--
tOLZ
tCHZ1
tCHZ2
tBDO
tOHZ
tOH
--
--
Chip Select to Output High Z
Chip Select to Output High Z
(CE)
--
30
30
30
25
--
--
35
35
35
30
--
(CE2)
--
--
Data Byte Control to Output High Z (LB, UB)
Output Enable to Output High Z
--
--
--
--
Data Hold from Address Change
10
10
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1 (1,2,4)
tRC
ADDRESS
tAA
tOH
tOH
DOUT
Revision 1.3
May. 2006
R0201-BS616LV2019
5
BSI [ BRILLIANCE SEMICONDUCTOR ]
