BS616LV4017
n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
READ CYCLE
CYCLE TIME : 55ns CYCLE TIME : 70ns
(VCC=3.0~5.5V) (VCC=2.7~5.5V)
MIN. TYP. MAX. MIN. TYP. MAX.
JEDEC
PARAMETER
NAME
PARANETER
DESCRIPTION
UNITS
NAME
tAVAX
tAVQX
tELQV
tBLQV
tGLQV
tELQX
tBLQX
tGLQX
tEHQZ
tBHQZ
tGHQZ
tAVQX
tRC
tAA
tACS
tBA
Read Cycle Time
55
--
--
--
--
--
--
--
--
--
--
--
--
--
--
55
55
55
30
--
70
--
--
--
--
--
--
--
--
--
--
--
--
--
--
70
70
70
35
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Select Access Time
(CE)
--
--
Data Byte Control Access Time
(LB, UB)
--
--
tOE
Output Enable to Output Valid
Chip Select to Output Low Z
--
--
(CE)
tCLZ
tBE
10
10
5
10
10
5
Data Byte Control to Output Low Z (LB, UB)
Output Enable to Output Low Z
--
--
tOLZ
tCHZ
tBDO
tOHZ
tOH
--
--
Chip Select to Output High Z
(CE)
--
30
30
25
--
--
35
35
30
--
Data Byte Control to Output High Z (LB, UB)
--
--
Output Enable to Output High Z
Data Hold from Address Change
--
--
10
10
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1 (1,2,4)
tRC
ADDRESS
tAA
tOH
tOH
DOUT
Revision 1.3
May. 2006
R0201-BS616LV4017
5
BSI [ BRILLIANCE SEMICONDUCTOR ]
