BS616LV2016
(1,3,4)
READ CYCLE 2
CE
tACS
tBA
tBE
LB, UB
DOUT
(5)
tCHZ
tBDO
(5)
tCLZ
(1, 4)
READ CYCLE 3
tRC
ADDRESS
tAA
OE
CE
tOH
tOE
tOLZ
(5)
tOHZ
tCHZ
(5)
tCLZ
(1,5)
tBA
tBE
LB, UB
DOUT
tBDO
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
Revision 1.2A
Mar. 2006
R0201-BS616LV2016A
6
BSI [ BRILLIANCE SEMICONDUCTOR ]
