BS616LV1010
n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
CYCLE TIME : 55ns CYCLE TIME : 70ns
(VCC=2.7~5.5V) (VCC=2.4~5.5V)
MIN. TYP. MAX. MIN. TYP. MAX.
JEDEC
PARAMETER
NAME
PARANETER
DESCRIPTION
UNITS
NAME
tAVAX
tAVWL
tAVWH
tELWH
tBLWH
tWLWH
tWHAX
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
tWC
tAS
Write Cycle Time
55
--
--
--
--
--
--
--
--
--
--
--
--
--
--
70
0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Set up Time
0
55
tAW
tCW
tBW
tWP
tWR
tWHZ
tDW
tDH
Address Valid to End of Write
Chip Select to End of Write
Data Byte Control to End of Write
Write Pulse Width
--
70
70
30
35
0
--
(CE) 55
(LB, UB) 25
30
--
--
--
--
--
--
Write Recovery Time
(CE, WE)
0
--
--
--
Write to Output High Z
25
--
--
30
--
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
25
0
30
0
--
--
tOHZ
tOW
--
25
--
--
30
--
5
5
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
(3)
tWR1
(11)
tCW
(5)
CE
tBW
LB, UB
(3)
tWR2
tAW
(2)
tWP
WE
tAS
(4,10)
tOHZ
DOUT
tDH
tDW
DIN
Revision 2.6
May. 2006
R0201-BS616LV1010
7
BSI [ BRILLIANCE SEMICONDUCTOR ]
