BS616LV1010
n DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC)
SYMBOL
VDR
PARAMETER
VCC for Data Retention
Data Retention Current
TEST CONDITIONS
CE≧VCC-0.2V
MIN.
1.5
--
TYP. (1)
MAX.
UNITS
--
0.02
--
--
0.5
--
V
VIN≧VCC-0.2V or VIN≦0.2V
CE≧VCC-0.2V
(3)
ICCDR
uA
ns
ns
VIN≧VCC-0.2V or VIN≦0.2V
Chip Deselect to Data
Retention Time
tCDR
0
See Retention Waveform
(2)
tR
Operation Recovery Time
tRC
--
--
1. VCC=1.5V, TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
3. ICCDR(Max.) is 0.3uA at TA=70OC.
n LOW VCC DATA RETENTION WAVEFORM (CE Controlled)
Data Retention Mode
DR≧1.5V
V
VCC
VCC
VCC
CE
tCDR
tR
CE≧VCC - 0.2V
VIH
VIH
n AC TEST CONDITIONS
n KEY TO SWITCHING WAVEFORMS
(Test Load and Input/Output Reference)
WAVEFORM
INPUTS
OUTPUTS
Input Pulse Levels
Vcc / 0V
1V/ns
MUST BE
STEADY
MUST BE
STEADY
Input Rise and Fall Times
Input and Output Timing
Reference Level
0.5Vcc
MAY CHANGE
WILL BE CHANGE
FROM “H” TO “L”
FROM “H” TO “L”
tCLZ, tOLZ, tCHZ, tOHZ, tWHZ
CL = 5pF+1TTL
CL = 30pF+1TTL
Output Load
Others
MAY CHANGE
WILL BE CHANGE
FROM “L” TO “H”
FROM “L” TO “H”
ALL INPUT PULSES
DON’T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
VCC
1 TTL
90%
90%
Output
10%
10%
GND
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
(1)
®
¬
®
¬
DOES NOT
APPLY
CL
Rise Time:
1V/ns
Fall Time:
1V/ns
1. Including jig and scope capacitance.
Revision 2.6
R0201-BS616LV1010
4
May.
2006
BSI [ BRILLIANCE SEMICONDUCTOR ]
